BYG21K & byg21m vishay general semiconductor document number: 88961 revision: 11-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 fast avalanche smd rectifier features ? low profile package ? ideal for automated placement ? glass passivated junction ? low reverse current ? soft recovery characteristic ? fast reverse recovery time ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 800 v, 1000 v i fsm 30 a i r 1.0 a v f 1.6 v t rr 120 ns e r 20 mj t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol BYG21K byg21m unit device marking code BYG21K byg21m maximum repetitive peak reverse voltage v rrm 800 1000 v average forward current i f(av) 1.5 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj operating junction and storage temperature range t j , t stg - 55 to + 150 c
BYG21K & byg21m vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88961 revision: 11-apr-08 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol BYG21K byg21m unit maximum instantaneous forward voltage (1) i f = 1 a i f = 1.5 a t j = 25 c v f 1.5 1.6 v maximum reverse current v r = v rrm t j = 25 c t j = 100 c i r 1 10 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 120 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol BYG21K byg21m unit typical thermal resistance, junction to lead t l = const. r jl 25 c/w typical thermal resistance, junction to ambient r ja 150 (1) 125 (2) 100 (3) c/w ordering information (example) preferred p/n unit weight (g) package code base q?ty delivery mode BYG21K-e3/tr 0.064 tr 1800 7" diameter plastic tape and reel BYG21K-e3/tr3 0.064 tr3 7500 13" diameter plastic tape and reel BYG21Khe3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel BYG21Khe3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel figure 1. forward current vs. forward voltage 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 for w ard v oltage ( v ) for w ard c u rrent (a) t j = 150 c t j = 25 c figure 2. max. average forward current vs. ambient temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 am b ient temperat u re (c) a v erage for w ard c u rrent ( a) 100 75 50 25 0 125 150 v r = v rrm half sine- w a v e r ja = 25 k/ w r ja = 125 k/ w r ja = 150 k/ w
BYG21K & byg21m vishay general semiconductor document number: 88961 revision: 11-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 figure 3. reverse current vs. junction temperature figure 4. max. reverse power diss ipation vs. junction temperature figure 5. diode capacitance vs. reverse voltage 1 10 100 25 50 75 100 125 150 re v erse c u rrent ( a) j u nction temperat u re ( c) v r = v rrm 0 20 40 60 8 0 100 120 25 50 75 100 125 150 re v erse po w er dissipation (m w ) j u nction temperat u re (c) v r = v rrm p r - limit at 100 % v r p r - limit at 8 0 % v r 0 5 10 15 20 25 0.1 1 10 100 f = 1 mhz re v erse v oltage ( v ) diode capac itance (pf) figure 6. max. reverse recovery charge vs. forward current figure 7. thermal response t a = 125 c 0 50 100 150 200 0 0.2 0.4 0.6 0. 8 1.0 re v erse reco v ery charge (nc) for w ard c u rrent (a) t a = 100 c t a = 25 c t a = 75 c t a = 50 c i r = 0.5 a, i r = 0.125 a 1 10 100 1000 thermal resistance for p u lse cond. (k/ w ) p u lse length (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 single p u lse 125 k/ w dc t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01
BYG21K & byg21m vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88961 revision: 11-apr-08 4 package outline dimensions in inches (millimeters) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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